Published Engineering Sciences Dependence between drain current saturation level and short-circuit robustness of p-GaN HEMTs Published on 31 July 2025 - Microelectronics Reliability Authors: M.L. Dedew, S. Lefebvre, T.A. Nguyen, T.L. Le, V. Rustichelli, J. Oliveira, M. Alam, F. Coccetti See the publication on HAL DOI Prev. Back to the list Next
