Méthode de détection de l'initiation du délaminage d'une brasure d'un assemblage 3D de MOSFETs SiC sur PCB

This article presents a method for evaluating the initiation of delamination at the corners of a solder joint in a 3D assembly of SiC MOSFETs on a PCB substrate. This assembly relies on the soldering of two metallic materials and addresses the integration of active chips that are relatively small compared to the heatsink. This technological development is part of an effort to evaluate the robustness of a new assembly model known as wideband gap components. This assembly consists of a PCB substrate on which a heatsink is soldered. However, conventional methods do not effectively meet the need to detect the initiation of delamination in this solder joint. Finite element simulations are conducted to assess the sensitivity of the method and the main discriminating factors. Based on the numerical results, representative prototypes of the assembly are fabricated with controlled delamination initiated at a corner of the solder joint. The method relies on electrical measurements that provide greater sensitivity for detecting the onset of solder joint delamination.