Published

Physics

Automatic optimization of doping profile for high performance Single-Photon Avalanche Diodes

Published on - International Workshop on Computational Nanotechnology (IWCN) 2023

Authors: Helleboid Rémi, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus, Rideau Denis, Mugny Gabriel, Nicholson Isobel, Grebot Jeremy

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A method to efficiently optimize doping profile for high performance Single-Photon Avalanche Diodes is presented. The method aims at maximizing the photon detection efficiency while minimizing the timing jitter and keeping the breakdown voltage in a reasonable range by optimizing the doping profile of the device. Two different optimization methods are compared, and their performances are evaluated on a one-dimensional model of a Si-SPAD.