Published

Electric power

Design of three-level flying-capacitor commutation cells with four paralleled 650V/60A GaN HEMTs

Published on - 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

Authors: Hans Hoffmann Sathler, Tianyu Zhao, François Costa, Bernardo Cougo, Gilles Segond, Rolando Burgos, Denis Labrousse

See the publication on HAL DOI

This paper presents two improved solutions (Vertical and Horizontal commutation cells) for three-level flying capacitor (FC) topologies with four 650 V/ 60 A (25 mΩ) GS66516T GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) in parallel per switch intended to be used in a 540 V / 70 kVA power drive system. Both solutions were built and experimentally tested, as a buck converter, regarding switching speed (15.14 kV / µs max) and overvoltage (6 % max) for different current levels (7 A to 53 A).