Published

Engineering Sciences

Efficiency and EMC Comparison of Si MOSFET and GaN HEMT Based Full Bridge DC-DC Converter

Published on - PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Authors: Ayawo Roger Ekon, Mickael Petit, François Costa, François Bouvet, Eric Dupuy

See the publication on HAL DOI

The fourth-generation corrector electromagnets of the SOLEIL synchrotron require compact switch mode power supplies (SMPS) with high dynamics in the transition phases, low residual output ripple of few ppm, good EMC performance and good efficiency. To achieve this, the study of a low-power bipolar DC-DC converter with a high switching frequency is in progress. A technological comparison between GaN HEMT and Si MOSFET based SMPS is proposed on the different criteria of the specifications.