EMI Mitigation Induced by An IGBT Driver Based on A Controlled Gate Current Profile

The transistors used in power electronics applications are source of electromagnetic interference(EMI) during switching process. In this work a gate current profile to reduce conducted EMI is proposed. It is based on the gate charge curve and it allows to control the conducted EMI generation with two degrees of freedom. In order to evaluate the performance of proposed method, it is compared with a validated method in the literature, namely, CATS method. It is shown that, for the same level of power switching losses, the conducted EMI generation is less with the proposed method.