Etude d'interrupteurs en carbure de silicium et potentiel d'utilisation dans des applications aéronautiques

The potential of wide band gap transistors based on silicon carbide are remarkable and open new prospects for improvement (high efficiency, high breakdown voltage, high switching frequency and high operating temperature ...). This leads to volume and weight reduction for future converters. In order to improve new generation of power converters for future needs, Thales, in cooperation with SATIE and LTN IFSTTAR laboratories, performs investigations on the performances, advantages and disadvantages of SiC technology semiconductors. This comparative study will assess the strengths and weaknesses as well as the stresses induced during integration into aircraft converters of commercially available devices.