Evaluation de la température des composants à semi-conducteurs de puissance au sein des convertisseurs d’énergie électrique : application aux onduleurs photovoltaïques pour accroitre leurs performances et leur disponibilité

The fast-paced advancements in the understanding of semiconductor theoretical basis lead to the conception of diversified power electronic devices. In the field of power electronics, the efficiency of those devices is strongly linked to high power rates and full integration trends that guide the design process of converters. Consequently, electrothermal constraints management is gaining importance when it comes to the reliability aspect of power systems. The key parameter that needs to be monitored during converter lifetime is the junction temperature of semi-conductor components.Many methods are used to estimate the junction temperature of semi-conductor chips embedded into power converters. That parameter is usually defined as a virtual junction temperature Tjv which reflects the temperature of the active parts of power chips. Among those approaches, ThermoSensitive Electrical Parameters (TSEPs) are widely employed. Nonetheless, the representativeness of TSEPs is not fully addressed in the scientific literature. It is therefore mandatory to investigate this aspect using new additional methods to validate the temperature measurements performed thanks to TSEPs, especially under the converter’s conditions of use.As part of our work, a new temperature measurement tool dedicated to TSEPs validation is designed. Microelectronic conventional processes are adapted in order to develop a power instrumented chips (Diodes, IGBTs) with integrated temperature sensor. It makes possible simultaneous junction temperature measurements using a TSEP and the on-chip resistive detector. The experimental validation results are performed using instrumented power modules and infrared thermography.