Méthodologie de modélisation d’une structure de conversion DC-DC à composants SiC en vue de son optimisation CEM et thermique

In the aeronautics industry, both manufacturers and OEMs, electric actuators are increasingly used. As a result, the appearance of switching power converters based on new large-gap silicon carbide components (MOSFET, JFET state on or off) increasingly generates electrical (LF and HF) and radiated perturbations (HF) within the systems, they are also sources of losses.The objective of this thesis is therefore to set up a modeling approach for the various elements of a DC-DC converter that can be used to implement an optimization process so that the design phase is taken into account constraints related to EMC and thermal.First, a study of the physics of semiconductors and in particular that of silicon carbide (SiC) was carried out in order to develop a modeling approach of the MOSFET and SiC power diode adapted to these components. The models thus developed are fine models that take into account the effects related to thermal. These models were therefore used initially to perform simulations in order to evaluate both thermally and electromagnetically the validity of the modeling approach.Subsequently, in order to take into account the EMC and thermal constraints from the design phase, an optimization dimensioning approach was implemented. Because of their speed of execution, the choice was made on a deterministic optimization algorithm. This choice therefore imposed the prior development of models of analytical dimensioning and optimization. All of these models have been used in the CADES optimization software environment and results regarding optimal converter masses for different switching frequencies have been obtained.Analysis of the optimization results in the last part of the study revealed that if the evolution of the dissipator mass as a function of the switching frequency is similar to what can be predicted the switching frequency causes the losses to increase and therefore the dissipator mass increases), that of the passive and the EMC filter can not be easily anticipated. There is a competition between the mass of the filter and that of the passive, since a high switching frequency presupposes, as a first approximation, the passive elements of lesser smoothing, but EMC problems are much greater.To complete the studies carried out, the previously implemented approach for SiC components has been transposed to silicon components for comparison purposes.