Consulter le flux RSS

Publications

Affichage des publications 1701 à 1710 sur 4015 au total

Electric power

Impact of Model Accuracy in Design by Optimization Process

This paper investigates the effect of model inaccuracies on the results of a design by optimization process applied to a SiC switching cell. The technologies used for this DC-DC converter and the requirements are briefly described, as well as the…

Mylène Delhommais, Gnimdu Dadanema, Yvan Avenas, Francois Costa, Jean-Luc Schanen, Christian Vollaire

PEDSTC -

Electric power

Design of inductors with high inductance values for resonant piezoelectric damping

The resonant piezoelectric shunt requires specific inductance and resistance values in order to reach an optimum in terms of vibration reduction. Yet, practical limits appear in the low frequency range: the required inductance and the corresponding…

Boris Lossouarn, Mathieu Aucejo, Jean-François Deü, Bernard Multon

Sensors and Actuators A: Physical -

Modeling and Simulation

Driver behaviour in fog is not only a question of degraded visibility - A simulator study

The aim of this simulator study was to determine whether the effects of fog on driver behaviour were identical for a given road type and whether they could explain fog-related crashes according to road type. Thirty-three participants drove on both…

Florence Rosey, Isabelle Aillerie, Stéphane Espie, Fabrice Vienne

Safety Science -

Modeling and Simulation

Design Optimization of a Hybrid-Excited Flux-Switching Machine for Aircraft safe DC Power Generation using a Diode Bridge Rectifier

This paper presents a design optimization methodology of a Hybrid-Excited Flux-Switching Machine (HEFSM) for aircraft DC power generation. Hybrid machines are favored in new aircraft embedded generation systems because of their high power density…

Andre Nasr, Sami Hlioui, Mohamed Gabsi, Mathieu Mairie, Didier Lalevee

IEEE Transactions on Industrial Electronics -

Electronics

Methodology for EMC Analysis in a GaN Based Power Module

Thanks to the material’s physical properties and the advancement in the engineering and manufacturing, power semiconductor devices based on Gallium Nitride (GaN) are promising candidates for high frequency, high efficiency and thus high power…

Xiaoshan Liu