Engineering Sciences

Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

Publié le 25 avril 2022 - 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

Auteurs : Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Mounira Bouarroudj-Berkani, Ayda Halouani, Tayssir Hamieh