Parasitic elements modeling and experimental identification in a gan hemt based power module

In this paper, the parasitic elements of a GaN based power module are investigated. Because the very high-speed switching of GaN high electron mobility transistors leads to overvoltage, conducted and radiated emissions, it is crucial to manage accurately the routing of the power module in order to minimize parasitic capacitances and inductances. The paper focuses on the prediction of these parasitic effects and their comparisons to measurements. In this approach, the difficulty lies in the determination of very small values of the parasitic elements which requires specific operating for calibration and measurements.