MODELING OF POWER SEMICONDUCTORS IN VHDL-AMS FOR EMI SIMULATIONS

The static converters are important sources of EMI. In order to reproduce the converters functioning by simulation, a special effort must be provided for the silicon component modeling. In our survey case, these models must be well adapted to the static converters simulation for EMC characterization. In this paper, we have focused on the semiconductor models by providing an IGBT VHDL-AMS model. This work allowed us to evaluate the switching effect on the conducted perturbations in the static converters while keeping a good compromise of accuracy and simulation time.