Electric power

Ensure an original and safe “Fail-to-Open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Publié le 31 décembre 2017 - 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct. 1-5, 2018, Aalborg (DENMARK)

Auteurs : François Boige, Frédéric Richardeau, S. Lefebvre, Jean Marc Blaquière, G. Guibaud