Engineering Sciences

Contribution à l'étude de l'effet du vieillissement de modules de puissance sur leur comportement électrothermique

Publié le

Auteurs : Ghania Belkacem Belkacem-Beldi

The work presented in this thesis focus on the study of the effect of degradation of power components, especially at the near environment of chips (metallization, connections, solder chips / DCB), on the electrical and thermal behavior of the chips and their assembly. As a consequence, we studied the distribution of currents and temperatures on the chip surface with a 2D electrothermal distributed model. We also evaluated the effect of solder degradation in the volume of the assembly. Firstly, we developed an electrothermal distributed model of the MOSFET chip, which takes into account both the distributed power dissipation and the electrothermal coupling transient. This electrothermal model is based on an electrical model of state variables and thermal finite element model coupled to the electric model. Electrical and thermal models were developed respectively in Matlab and CAST3M whereas the two models coupling was done in Simulink . In the second part, to validate the results of temperatures and to analyze the effect of ageing and degradation on the distribution and dynamics of temperature of the upper surface of the chip, methodology rapid temperature measurement and an experimental bench for infrared thermography were established. The difficulties encountered in IR thermal measurements with rapid temperature change led us to consider other thermal analysis methods. Eventually, we assessed the impulse response of the tested component by estimating with thermal simulations, the transfer function in the frequency domain using the COMSOL Multiphysics software. Moreover we evaluated the relevance of RC equivalent models (RC Cauer network). These models were then used to account for different modes of degradation this time especially on the solder layer between the chip and DCB and between the DCB and sole. Keywords: Power Modules semiconductor, Ageing, Metallization, electrothermal modeling, Short Circuit, Power and temperature distribution, inverse problem, IR Camera, Cauer networks.