Contribution à l'élaboration de modèles précis et à faible coût de calcul pour l'électronique de puissance et la CEM

Electromagnetic compatibility (EMC) is one of the major constraints involved in the design of power electronics structures. In the case of static power converters, the switching of semiconductors and their interactions with the parasitic elements related to the environment are the main source of conducted disturbances. This interaction is increasing especially with the industrialization of new generations of wide band gap semiconductors that become increasingly impressive thanks to their low switching losses and their rapidity. Unfortunately, the study of the disturbances is often considered as the last obstacle to the marketing and it is not taken as a design constraint. An early estimation of these disturbances by simulation can provide a reduction in processing time and a considerable economic gain. In this manuscript, we focus on semiconductors models and their effects on conducted interference in static converters. This study will also reveal problems related to time or frequency simulations and usefulness of each one. Then, we propose models for silicon-carbide MOSFET and Schottky diode and we analyze the influence of their parameters on the conducted disturbances in a chopper circuit. We also expose an approach to obtain more reasonable simulation time by controlling parasitic signals and operating cycles. Finally, we introduce a new method to describe switching’s by using equivalent sources. We show that by studying the command law, it is possible to propose a synthesizing method of a switching cell able to rebuild its electrical outputs.